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| RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09833. Features * 15A, 60V * rDS(ON) = 0.150 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFD15P06 RFD15P06SM RFP15P06 PACKAGE TO-251AA TO-252AA TO-220AB BRAND F15P06 F15P06 RFP15P06 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD15P06SM9A. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 4-103 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFD15P06, RFD15P06SM, RFP15P06 Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified RFD15P06, RFD15P06SM, RFP15P06 -60 -60 15 Refer to Peak Current Curve 20 Refer to UIS Curve 80 0.533 -55 to 175 300 260 UNITS V V A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Figure 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(-10) Qg(TH) CISS COSS CRSS RJC RJA TO-220AB, TO-251AA, TO-252AA TO-251AA, TO-252AA TO-220AB VGS = 0V to -20V VGS = 0V to -10V VGS = 0V to -2V VDD = -48V, ID = 15A, RL = 3.20 IG(REF) = 0.65mA TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 150oC VGS = 20V ID 15A, VGS = -10V, (Figure 9) VDD = -30V, ID = 7.5A RL = 4.0, VGS = -10V RG = 12.5 (Figure 13) MIN -60 -2.0 TYP 16 30 50 20 1150 300 56 MAX -4.0 -1 -25 100 0.150 60 100 150 75 3.5 1.875 100 62 UNITS V V A A nA W ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient VDS = -25V, VGS = 0V f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Notte 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration 300ms Max, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL VSD trr ISD = -15A ISD = -15A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX -1.5 125 UNITS V ns 4-104 RFD15P06, RFD15P06SM, RFP15P06 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) -12 Unless Otherwise Specified -16 0.8 0.6 0.4 -8 -4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1 THERMAL IMPEDANCE ZJC, NORMALIZED 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JC x R JC + TC 100 101 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -100 TJ = MAX RATED TC = 25oC IDM , PEAK CURRENT (A) -200 VGS = -20V -100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 - T C I = I 25 ----------------------- 150 ID, DRAIN CURRENT (A) 100s -10 1ms VGS = -10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -10 10-5 10-4 10-3 10-2 10-1 TC = 25oC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -1 -1 -10 VDS , DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms DC -100 100 101 t, PULSE WIDTH (s) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY 4-105 RFD15P06, RFD15P06SM, RFP15P06 Typical Performance Curves -50 -40 IAS , AVALANCHE CURRENT (A) STARTING TJ = 150oC ID , DRAIN CURRENT (A) STARTING TJ = 25oC -10 -30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -20V VGS = -10V VGS = -8V Unless Otherwise Specified (Continued) -20 VGS = -7V -1 0.1 If R = 0 tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 10 tAV, TIME IN AVALANCHE (ms) 100 VGS = -6V -10 VGS = -4.5V 0 0 -1.5 -3.0 -4.5 -6.0 -7.5 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS = -5V NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS IDS(ON) , DRAIN TO SOURCE CURRENT (A) -40 -55oC NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = -15V 25oC 2.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V, ID = 15A -32 2.0 -24 175oC -16 1.5 1.0 -8 0.5 0 0 -2 -4 -6 -8 VGS , GATE TO SOURCE VOLTAGE (V) -10 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 2.0 ID = 250A 1.5 1.5 1.0 1.0 0.5 0.5 0 -80 -40 0 40 80 120 160 200 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-106 RFD15P06, RFD15P06SM, RFP15P06 Typical Performance Curves 1400 VDS , DRAIN TO SOURCE VOLTAGE (V) 1200 C, CAPACITANCE (pF) 1000 800 600 COSS 400 200 0 0 -5 -10 -15 -20 -25 20 VDS , DRAIN TO SOURCE VOLTAGE (V) CISS Unless Otherwise Specified (Continued) -60 VDD = BVDSS -45 RL = 3.33 IG(REF) = 0.65mA VGS = -10V 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS VDD = BVDSS -7.5 -10 VGS , GATE TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS -30 -5 -15 -2.5 CRSS 0 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0 + VDD VDD 0V VGS DUT tP IAS 0.01 IAS tP BVDSS VDS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) VDS RL VGS 0 tr 10% tOFF td(OFF) tf 10% VDD VGS RGS + VDS VGS 0 90% 90% DUT 10% 50% PULSE WIDTH 90% 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-107 RFD15P06, RFD15P06SM, RFP15P06 Test Circuits and Waveforms (Continued) VDS RL 0 VGS = -2V VGS Qg(TH) VDS VDD + -VGS Qg(-10) VDD Qg(TOT) 0 Ig(REF) VGS = -10V DUT Ig(REF) VGS = -20V FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS 4-108 RFD15P06, RFD15P06SM, RFP15P06 PSPICE Electrical Model .SUBCKT RFP15P06 2 1 3 CA 12 8 1.6e-9 CB 15 14 1.47e-9 CIN 6 8 1.09e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 5 11 17 18 -73.0 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 6.73e-9 LSOURCE 3 7 6.69e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 63.6e-3 RGATE 9 20 7.37 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 46.5e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.65 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))} .MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8) .MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5) .MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10) .MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7) .MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5) .MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6) .MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. S1A 12 13 8 S1B CA + 6 EGS 8 + EDS 14 5 8 13 S2A 14 13 S2B CB IT 19 VBAT + 15 17 7 RBREAK 18 GATE LGATE RGATE 1 9 REV 9/06/94 LDRAIN 10 DPLCAP RSCL2 5 51 RSCL1 5 2 DRAIN ESCL 17 18 + ESG + EVTO 20 18 8 6 8 VTO RDRAIN 16 EBREAK DBODY 6 RIN + MOS2 21 MOS1 11 DBREAK 8 RSOURCE LSOURCE 3 SOURCE - + CIN RVTO - - - 4-109 RFD15P06, RFD15P06SM, RFP15P06 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-110 |
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